Services

Our customers choose Silicom, since we offer a most unique concept of combined hands-on design and simulation expertise to our customer projects. Our expertises cover

   

  • Hands-on design in crystal growth
    • Proven track record of significant innovations and process enhancements that are utilized in 100 crystal growth furnaces
    • Innovations and enhancements based on extensive expertise in mechanical design and problem solving, including hot-zone and component designs for different generation furnaces (e.g., 16-36” in CZ)
    • Long-term (more than 30 years) hands-on experience in process control and instrumentation in crystal growth
    • In-depth understanding of crystal growth phenomena based on views and experiences on heat transfer mechanisms, electro-magnetism, melt and gas behaviors, stresses, and defects, an on large range of high-temperature materials and their mechanical and thermal properties, including graphite, graphite composites, insulating materials, metals and ceramics
    • Active communication with crystal growth furnace manufacturers, material and component providers, and academia
  • Simulation of Czochralski silicon crystal growth
    • Steady and transient analyses in axi-symmetric and 3D geometries
    • Global heat transfer including conduction, melt convection (Grahof and Marangoni convections, rotations of crystal and crucible), gas convection, radiation, phase-change between crystal and melt, and adjusted heater power
    • Oxygen transportation in melt
    • Cusp and transversal magnetic fields
    • Thermal stress and displacement analysis in crystal
    • Experimentally validated numerical hot-zone and magnetic fields designs
  • Simulation of HEM for sapphire crystal growth
    • Steady and transient analyses in axi-symmetric geometries
    • Global heat transfer including conduction, melt convection (Grahof convection), gas convections, radiation in opaque and transparent materials, phase-change between crystal and melt, and adjusted heater power
    • Thermal stress and displacement analysis in crystal and crucible
    • Experimentally validated numerical process design in seed-melting, crystal growth and cooling
  • Simulation of sublimation growth for silicon carbide
    • Steady analyses in axi-symmetric geometries
    • Global heat transfer including conduction and radiation, and gas convection
  • Simulation of Bridgman growth for NiMnGa crystals
    • Steady analyses in axi-symmetric geometries
    • Global heat transfer including conduction, melt convection (Grahof convection), radiation and adjusted heater power
    • Induction heating