Our customers choose Silicom, since we offer a most unique concept of combined hands-on design and simulation expertise to our customer projects. Our expertises cover
- Hands-on design in crystal growth
- Proven track record of significant innovations and process enhancements that are utilized in 100 crystal growth furnaces
- Innovations and enhancements based on extensive expertise in mechanical design and problem solving, including hot-zone and component designs for different generation furnaces (e.g., 16-36” in CZ)
- Long-term (more than 30 years) hands-on experience in process control and instrumentation in crystal growth
- In-depth understanding of crystal growth phenomena based on views and experiences on heat transfer mechanisms, electro-magnetism, melt and gas behaviors, stresses, and defects, an on large range of high-temperature materials and their mechanical and thermal properties, including graphite, graphite composites, insulating materials, metals and ceramics
- Active communication with crystal growth furnace manufacturers, material and component providers, and academia
- Simulation of Czochralski silicon crystal growth
- Steady and transient analyses in axi-symmetric and 3D geometries
- Global heat transfer including conduction, melt convection (Grahof and Marangoni convections, rotations of crystal and crucible), gas convection, radiation, phase-change between crystal and melt, and adjusted heater power
- Oxygen transportation in melt
- Cusp and transversal magnetic fields
- Thermal stress and displacement analysis in crystal
- Experimentally validated numerical hot-zone and magnetic fields designs
- Simulation of HEM for sapphire crystal growth
- Steady and transient analyses in axi-symmetric geometries
- Global heat transfer including conduction, melt convection (Grahof convection), gas convections, radiation in opaque and transparent materials, phase-change between crystal and melt, and adjusted heater power
- Thermal stress and displacement analysis in crystal and crucible
- Experimentally validated numerical process design in seed-melting, crystal growth and cooling
- Simulation of sublimation growth for silicon carbide
- Steady analyses in axi-symmetric geometries
- Global heat transfer including conduction and radiation, and gas convection
- Simulation of Bridgman growth for NiMnGa crystals
- Steady analyses in axi-symmetric geometries
- Global heat transfer including conduction, melt convection (Grahof convection), radiation and adjusted heater power
- Induction heating
